Description
This device is an NPN power transistor manufactured using high voltage multi epitaxial planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.

Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode

Applications
■ Electronic ballast for fluorescent lighting
■ Electronic transformer for halogen lamps