Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.

Features
 Maximum junction temperature: TJ = 175 °C
 High speed switching series
 Minimized tail current
 VCE(sat) = 2.1 V (typ.) @ IC = 40 A
 5 μs minimum short circuit withstand time at
TJ=150 °C
 Safe paralleling
 Very fast recovery antiparallel diode
 Low thermal resistance

Applications
 Uninterruptible power supply
 Welding machines
 Photovoltaic inverters
 Power factor correction
 High frequency converters