The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–source amplifier applications in 28 volt base station equipment.

• Typical Performance at 945 MHz, 28 Volts
   Output Power – 45 Watts PEP
   Power Gain – 18.5 dB
   Efficiency – 41% (Two Tones)
   IMD – –31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Moisture Sensitivity Level 3
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.