General Description

The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifi ers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifi er provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.

Features

  Psat Output Power: +26 dBm

  > 40% PAE

  Output IP3: +36 dBm

  High Gain: 21 dB

  Vs: +5V

  Ultra Small Package: MSOP8G

Typical Applications

The HMC326MS8G / HMC326MS8GE is ideal for:

  • Microwave Radios

  • Broadband Radio Systems

  • Wireless Local Loop Driver Amplifi er