General Description
The Micron® 256Mb reduced latency DRAM (RLDRAM®) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) form at where the data is provided and synchronized with a differential echo clock signal. RLDRAM does not require row/column address multiplexing and is optimized for fast random access and high-speed bandwidth.
RLDRAM is designed for high bandwidth communication data storage—telecommunications, networking, and cache applications, etc.

Features
• Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
• Cyclic bank addressing for maximum data bandwidth
• Non multiplexed addresses
• Non interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR
• Up to 600 Mb/sec/pin data rate
• Programmable READ latency (RL) of 5-6
• Data valid signal (DVLD) activated as read data is available
• Data mask signals (DM0/DM1) to mask first and
• second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O
• Pseudo-HSTL 1.8V I/O Supply
• Internal auto precharge
• Refresh requirements: 32ms at 95°C case
   temperature (8K refresh for each bank, 64K refresh
   command must be issued in total each 32ms)
• 144-pin, 11mm x 18.5mm µBGA package