Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Features
■ Improved die-to-footprint ratio
■ Very low profile package (1mm max)
■ Very low thermal resistance
■ Very low gate charge
■ Very low on-resistance
■ Optimized to be driven @ 2.5 V
■ In compliance with the 2002/95/EC European directive

Applications
■ Switching applications