Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation.

Product Features

• GaN on SiC Chip on Board

• Surface Mount Hybrid Type

• Asymmetric Doherty Amplifier

• High Efficiency

• No Matching circuit needed

Applications

• RF Sub-Systems

• Base Station

• RRH

• 4G/ LTE system

• Small cell