DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the micro X package is ideal for low-cost, high-performance applications that require a surface-mount package.
The LPD200MX is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appopriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.

FEATURES
♦ 1.0 dB Noise Figure at 1.8 GHz
♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
♦ 31 dBm IP3 at 1.8 GHz
♦ 60% Power-Added-Efficiency