DESCRIPTION AND APPLICATIONS

The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also features Si3N4 passivation and is available in die form or in surface-mount packages.

The LP750P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems.

FEATURES

♦ 41 dBm IP3 at 12 GHz

♦ 27.5 dBm P-1dB at 12 GHz

♦ 10.5 dB Power Gain at 12 GHz

♦ 2.5 dB Noise Figure at 12 GHz

♦ 60% Power-Added-Efficiency