TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

N–Channel Enhancement–Mode Silicon Gate

TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

New Features of TMOS V

• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E–FET