TMOS V™ SOT-223 for Surface Mount

N–Channel Enhancement–Mode Silicon Gate

TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

New Features of TMOS V

• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

• Faster Switching than E–FET Predecessors

Features Common to TMOS V and TMOS E–FETS

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E–FET

• Available in 12 mm Tape & Reel

   Use MMFT3055VT1 to order the 7 inch/1000 unit reel

   Use MMFT3055VT3 to order the 13 inch/4000 unit reel