COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

... designed for general-purpose power amplifier and switching applications.

● Low Collector-Emitter Saturation Voltage -
   VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc
● Low Leakage Current -
   ICEX = 0.5 mAdc (Max) @ Rated Voltage
● Excellent DC Current Gain -
   hFE = 20 (Min) @ IC = 4.0 Adc
● High Current Gain - Bandwidth Product -
   fT = 4.0 MHz (Min) @ IC = 0.5 A