DESCRIPTION
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.

FEATURES
• Part Identification
    - KM41C4000D/D-L(5V, 1K Ref.)
    - KM41V4000D/D-L(3.3V, 1K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages
• +5V±10% power supply(5V product)
• +3.3V±0.3V power supply(3.3V product)