DESCRIPTION

This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche character

istics. The adoption of the Company’s proprietary strip technique yields overall performances that are significantly better than that of similar competition’s products.



TYPICAL RDS(on) = 0.075Ω


HIGH dv/dt AND AVALANCHE CAPABILITIES


100% AVALANCHE TESTED


LOW INPUT CAPACITANCE AND GATE CHARGE

LOW GATE INPUT RESISTANCE


TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.