Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ TYPICAL RDS(on) = 0.015 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
■ THROUGH-HOLE I²PAK (TO-262) POWER

Applications
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE TYPE VDSS RDS(on) ID STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP 60 V 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω <0.018 Ω 50 A 50 A 50 A 50 A(*) 1 2 3 1 2 3 1 2 3 TO-220 TO-220FP 1 3 D²PAK TO-263 (Suffix “T4”) I²PAK TO-262 (Suffix “-1”) INTERNAL SCHEMATIC DIAGRAM