DESCRIPTION
The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

■ MEDIUM VOLTAGE CAPABILITY
■ NPN TRANSISTORS
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)

APPLICATIONS:
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES