GENERAL DESCRIPTION
SVD830T/F/D is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.

FEATURES
∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability