1 Features
• VID v62/26605
• Radiation - Total Ionizing Dose (TID):
– TID performance assurance up to 30krad(Si)
– Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
• Radiation - Single-Event Effects (SEE):
– Single Event Latch-Up (SEL) immune up to 43MeV-cm2 /mg at 125°C
– Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
• Supports defense, aerospace, and medical applications
– Operating temperature from –55°C to +125°C
– Controlled baseline
– Au bondwire and NiPdAu lead finish
– Outgassing test performed per ASTM E595
– One fabrication, assembly, and test site
– Extended product life cycle
– Product traceability
• Wide common-mode voltage:
– Operational voltage: −4V to +80V
– Survival voltage: −20V to +85V
• Excellent CMRR:
– 160dB DC-CMRR
– 85dB AC-CMRR at 50kHz
• Accuracy:
– Gain:
• Gain error: ±0.15% (maximum)
• Gain drift: ±10ppm/ °C (maximum)
– Offset:
• Offset voltage: ±30μV (typical)
• Offset drift: ±0.05μV/ °C (typical)
• Available gain:
– INA951-SEP A1, : 20V/V
• High bandwidth: 1.3MHz
• Slew rate: 2.5V/μs
• Quiescent current: 1.5mA