DESCRIPTION
The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

■ SUPPLY VOLTAGE
    – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read
    – VPP = 12V for fast Program (optional)
■ MULTIPLEXED ADDRESS/DATA
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Burst mode Read: 40MHz
    – Page mode Read (4 Words Page)
    – Random Access: 100ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Two or four words programming option
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 4/12 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Read within one Bank while Program or Erase within the other
    – No delay between Read and Write operations
■ PROTECTION/SECURITY
    – All Blocks protected at Power-up
    – Any combination of Blocks can be protected
    – 64 bit unique device identifier
    – 64 bit user programmable OTP cells
    – One parameter block permanently lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M58MR016C: 88DEh
    – Bottom Device Code, M58MR016D: 88E0h