SUMMARY DESCRIPTION
The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W040B is fully backward compatible with the M29W040.

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
    – 10µs per Byte typical
■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program algorithm
    – Embedded Multi-Block/Chip Erase algorithm
    – Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: E3h
■ ECOPACK® PACKAGES AVAILABLE