General Description：
CS150N03 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.

Features：
l Fast Switching
l Low ON Resistance(Rdson≤3.5 mΩ)
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test

Applications：
Power switch circuit of adaptor and charger.