1 Features
• Ultra-low CiSS and COSS
• Ultra-low Qg and Qgd
• Ultra-small footprint
– 0.73 mm × 0.64 mm
• Ultra-low profile
– 0.36-mm max height
• Integrated ESD protection diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
• Lead and halogen free
• RoHS compliant

2 Applications
• Optimized for load switch applications
• Optimized for general purpose switching
applications
• Battery applications
• Handheld and mobile applications

3 Description
This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. Ultralow
capacitance improves switching speeds. When
used in data line applications, the low capacitance
minimizes noise coupling. This technology is capable
of replacing standard small signal MOSFETs while
providing a substantial reduction in footprint size.