State-of-the-Art EPIC-IIBE BiCMOS Design
Significantly Reduces Power Dissipation
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
High-Drive Outputs (–32-mA IOH, 64-mA IOL)
Package Options Include Plastic
Small-Outline (DW), Shrink Small-Outline
(DB), and Thin Shrink Small-Outline (PW)
Packages, Ceramic Chip Carriers (FK),
Plastic (N) and Ceramic (J) DIPs, and
Ceramic Flat (W) Package

description
The ’ABT540 octal buffers and line drivers are
ideal for driving bus lines or buffer memory
address registers. The devices feature inputs and
outputs on opposite sides of the package that
facilitate printed circuit board layout.
The 3-state control gate is a 2-input AND gate with
active-low inputs so that if either output-enable
(OE1 or OE2) input is high, all corresponding
outputs are in the high-impedance state.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN54ABT540 is characterized for operation over the full military temperature range of –55°C to 125°C. The
SN74ABT540 is characterized for operation from –40°C to 85°C.