State-of-the-Art EPIC-IIBE BiCMOS Design
Significantly Reduces Power Dissipation
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
High-Impedance State During Power Up
and Power Down
Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
High-Drive Outputs (–32-mA IOH, 64-mA IOL)
Package Options Include Plastic
Small-Outline (DW) Package, Ceramic Chip
Carriers (FK), and Plastic (NT) and
Ceramic (JT) DIPs

description
The ’ABT861 are 10-bit transceivers designed for
asynchronous communication between data
buses. The control-function implementation
allows for maximum flexibility in timing.
These devices allow noninverted data
transmission from the A bus to the B bus or from
the B bus to the A bus, depending on the logic
levels at the output-enable (OEAB and OEBA)
inputs.
When VCC is between 0 and 2.1 V, the device is
in the high-impedance state during power up or
power down. However, to ensure the
high-impedance state above 2.1 V, OE should be
tied to VCC through a pullup resistor; the minimum
value of the resistor is determined by the
current-sinking capability of the driver.
The SN54ABT861 is characterized for operation
over the full military temperature range of –55°C
to 125°C. The SN74ABT861 is characterized for
operation from –40°C to 85°C.