Features
• Electrically screened to SMD #5962-95669
• QML qualified per MIL-PRF-38535 requirements
• Maximum acquisition time
- 10V Step to 0.1% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4µs
- 10V Step to 0.01% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6µs
• Maximum drift current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10nA
(maximum over-temperature)
• TTL compatible control input
• Power supply rejection . . . . . . . . . . . . . . . . . . . . . . . . . 80dB
• Radiation tolerance
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
* Only the EH device is wafer-by-wafer acceptance tested at
the low dose rate and guaranteed to 50krad(Si). The
100krad(Si) limit is established by characterization only.
• No latch-up