FEATURE
a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process.
   For example, typical Vce(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Over-temperature protection by detecting Tj of the IGBT chips
• 3φ 75A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 5.5/7.5kW class inverter application

APPLICATION
   Servo drives and other motor controls