Functional Description[1]
The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions.

Features
• Can support up to 133-MHz bus operations with zero wait states
   — Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT™ devices
• Internally self-timed output buffer control to eliminate the need to use OE
• Registered inputs for flow-through operation
• Byte Write capability
• 128K x 36 common I/O architecture
• 2.5V/3.3V I/O power supply (VDDQ)
• Fast clock-to-output times
   — 6.5 ns (for 133-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Available in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package
• Burst Capability—linear or interleaved burst order
• Low standby power