FEATURES
 Voltage Supply: 1.8V (1.7 V ~ 1.95V)
 Organization
x8:
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
x16:
- Memory Cell Array: (64M + 2M) x 16bit
- Data Register: (1K + 32) x 16bit
 Automatic Program and Erase
x8:
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
x16:
- Page Program: (1K + 32) Word
- Block Erase: (64K + 2K) Word
 Page Read Operation
x8
- Page Size: (2K + 64) Byte (x8)
- Random Read: 25us (Max.)
- Serial Access: 45ns (Min.)
x16
-Page Size: (1K + 32) Word (x16)
 Memory Cell: 1bit/Memory Cell
 Fast Write Cycle Time
x8
- Program time: 300us (Typ.)
- Block Erase time: 4ms (Typ.)
 Command/Address/Data Multiplexed I/O Port
 Hardware Data Protection
- Program/Erase Lockout During Power Transitions
 Reliable CMOS Floating Gate Technology
- ECC Requirement: x8 - 4bit/512Byte,
x16 - 4bit/256Word
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
 Command Register Operation
 Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
 NOP: 4 cycles
 Cache Program/Read Operation for High Performance
Program
 Cache Read Operation
 Copy-Back Operation
 EDO mode
 Bad-Block-Protect
 One Time Program (OTP) Operation