General Description
This very high density process is tailored to minimize on-state
resistance at low gate drive conditions. This device is designed
especially for application in battery circuits using either one
lithium or three cadmium or NMH cells. It can be used as an inverter
or for high-efficiency miniature discrete DC/DC
conversion in compact portable electronic devices like cellular
phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts.

Features
VDS (V) = 25V
ID= 2A
RDS(ON)< 28mΩ (VGS = 4.5V)
RDS(ON)< 42mΩ (VGS= 2.7V)
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1V.
Gate-Source Zener for ESD ruggedness.>6kV
Human Body Model
Compact industry standard SOT-23 surface mount package.