General Description
The AO6601 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.

Features
N-Ch:
VDS (V)=30V
RDS(ON)< 60mΩ (VGS = 10V)
RDS(ON)< 70mΩ (VGS = 4.5V)
RDS(ON)< 90mΩ (VGS = 2.5V)
ID= 3.4A (VGS=10V)
P-Ch:
VDS (V)=-30V
RDS(ON)< 115mΩ (VGS = -10V)
RDS(ON)< 150mΩ (VGS = -4.5V)
RDS(ON)< 200mΩ (VGS = -2.5V)
ID=-2.3A (VGS=-10V)