Description
The MA4SW510B-1 is a SP5T Series-Shunt broad band switch with integrated bias networks made with M/A-COM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz.

Features
■ Ultra Broad Bandwidth: 2 GHz to 18 GHz
■ 1.8 dB Insertion Loss, 35 dB Isolation at 18 GHz
■ Reliable. Fully Monolithic, Glass Encapsulated Construction

Applications
  These high performance switches are suitable for the use in multiband ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved.