Description
In the OptoHiT series, the FODM8801 is a first−of−kind
phototransistor, utilizing onsemi’s leading−edge proprietary process
technology to achieve high operating temperature characteristics, up
to 125°C. The opto−coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light−emitting diode (LED) optically coupled to a
phototransistor, available in a compact half−pitch, mini− flat, 4−pin
package. It delivers high current transfer ratio at very low input
current. The input−output isolation voltage, VISO, is rated at 3750
VACRMS.

Features
• Utilizing Proprietary Process Technology to Achieve High Operating
Temperature: Up to 125°C
• Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
♦ Excellent CTR Linearity at High−Temperature
♦ CTR at Very Low Input Current, IF
• High Isolation Voltage Regulated by Safety Agency:
C−UL / UL1577, 3750 VACRMS for 1 Minute and
DIN EN/IEC60747−5−5
• Compact Half−Pitch, Mini−Flat, 4−Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height)
• >5 mm Creepage and Clearance Distance
• Applicable to Infrared Ray Reflow, 245°C
• These are Pb−Free Devices

Applications
• Primarily Suited for DC−DC Converters
• Ground−Loop Isolation, Signal−Noise Isolation
• Communications – Adapters, Chargers
• Consumer – Appliances, Set−Top Boxes
• Industrial – Power Supplies, Motor Control, Programmable Logic Control