General Description
The H11FXM series consists of a Gallium−Aluminum−Arsenide
IRED emitting diode coupled to a symmetrical bilateral silicon
photo−detector. The detector is electrically isolated from the input
and performs like an ideal isolated FET designed for distortion−free
control of low level AC and DC analog signals. The H11FXM series
devices are mounted in dual in−line packages.

Features
• As a Remote Variable Resistor:
♦ ≤ 100  to ≥ 300 M
♦ ≤15 pF Shunt Capacitance
♦ ≥100 G I/O Isolation Resistance
• As an Analog Switch:
♦ Extremely Low Offset Voltage
♦ 60 Vpk−pk Signal Capability
♦ No Charge Injection or Latch−Up
♦ UL Recognized (File #E90700)
• These are Pb−Free Devices

Application
• As a Remote Variable Resistor:
♦ Isolated Variable Attenuator
♦ Automatic Gain Control
♦ Active Filter Fine Tuning/Band Switching
• As an Analog Switch:
♦ Isolated Sample and Hold Circuit
♦ Multiplexed, Optically Isolated A/D Conversion