Description
The BUL3N7 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3P5, its complementary PNP transistor.

Features
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED

Applications
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING