Description
The device is manufactured in NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features
■ Very low collector to emitter saturation
   volatage
■ High current gain characteristic
■ Fast-switching speed
■ Through-hole IPAK (TO-251) power package
   in tube (suffix”-1”)
■ Surface mounting DPAK (TO-252) power
   package in tape & reel (suffix”T4”)

Applications
■ Ccfl drivers
■ Voltage regulators
■ Relay drivers
■ High efficiency low voltage switching
   applications