1. General description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic
level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3
portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking
performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode
but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency
applications at high switching frequencies.
2. Features and benefits
• Improved creepage and clearance – meets the requirements of UL2595
• 300 A capability
• Avalanche rated, 100% tested at IAS = 190 A
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 150 °C
• Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
• Brushed and brushless motor control
• Battery powered appliances where enhanced creepage and clearance is required to meet
UL2595
• For non-UL2595 applications please use PSMN0R9-30YLD