Features
• Single event effect (SEE) hardened
(up to LET of 91.3 MeV·cm2/mg)
• Low RDS(on)
• Rugged SOA
• Improved Avalanche Energy
• Simple drive requirements
• Hermetically sealed
• Ceramic package
• Light weight
• Surface mount
ESD rating: Class 2 per MIL-STD-750, Method 1020

Description
IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved
immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy
Transfer (LET) up to 91.3 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA will allow for better
performance in applications such as Latching Current Limiters or Solid-State Power Controllers. These devices
retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature
stability of electrical parameters.