1. General description
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a
normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and
low-voltage silicon MOSFET technologies — offering superior reliability and performance.
2. Features and benefits
• Ultra-low reverse recovery charge
• Simple gate drive (0 V to +10 V or 12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability
3. Applications
• Hard and soft switching converters for industrial and datacom power
• Bridgeless totempole PFC
• PV and UPS inverters
• Servo motor drives