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74AUP1T57GN bảng dữ liệu (PDF) - Nexperia B.V. All rights reserved

74AUP1T57GN Datasheet PDF - Nexperia B.V. All rights reserved
tên linh kiện 74AUP1T57GN
tải về  74AUP1T57GN tải về
kích thước tập tin   265.73 Kbytes
Page   17 Pages
nhà sản xuất  NEXPERIA [Nexperia B.V. All rights reserved]
Trang chủ  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Giải thích chi tiết về linh kiện Low-power configurable gate with voltage-level translator

74AUP1T57GN Datasheet (PDF)

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74AUP1T57GN Datasheet PDF - Nexperia B.V. All rights reserved

tên linh kiện 74AUP1T57GN
tải về  74AUP1T57GN Click to download

kích thước tập tin   265.73 Kbytes
Page   17 Pages
nhà sản xuất  NEXPERIA [Nexperia B.V. All rights reserved]
Trang chủ  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Giải thích chi tiết về linh kiện Low-power configurable gate with voltage-level translator

74AUP1T57GN bảng dữ liệu (HTML) - Nexperia B.V. All rights reserved


74AUP1T57GN Thông tin chi tiết sản phẩm

1. General description
The 74AUP1T57 is a configurable multiple function gate with level translating, Schmitt-trigger
inputs. The device can be configured as any of the following logic functions AND, OR, NAND,
NOR, XNOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC
or GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels
in 3.3 V applications.
This device ensures very low static and dynamic power consumption across the entire VCC range
from 2.3 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The
IOFF circuitry disables the output, preventing the potentially damaging backflow current through the
device when it is powered down.
2. Features and benefits
• Wide supply voltage range from 2.3 V to 3.6 V
• High noise immunity
• Low static power consumption; ICC = 1.5 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
• Overvoltage tolerant inputs to 3.6 V
• Low noise overshoot and undershoot < 10 % of VCC
• IOFF circuitry provides partial power-down mode operation
• ESD protection:
• HBM JESD22-A114F Class 3A exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V
• CDM JESD22-C101E exceeds 1000 V
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C




Số phần tương tự - 74AUP1T57GN

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Mô tả tương tự - 74AUP1T57GN

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