Description
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency,
and a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance, 2605 MHz, 48 V,
combined outputs, 16 µs pulse width, 10% duty
cycle
- Output power at P3dB = 250 W
- Efficiency = 62%
- Gain = 14.4 dB
• Capable of handling 10:1 VSWR @48 V, 38 W (CW)
output power
• Human Body Model Class 1A (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant