Description
Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron drift
velocity, and higher thermal conductivity. GaN HEMTs offer greater power
density and wider bandwidths compared to Si and GaAs transistors.
Large Signal Models Available for ADS and MWO
Features
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 120 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Efficiency
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, LTE, EDGE, CDMA waveforms