Description
Wolfspeed's CGH55015F2/P2 is a gallium nitride (GaN) high
electron mobility transistor (HEMT) designed specifically for
high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH55015F2/P2 ideal for C-band pulsed or
CW saturated amplifiers. The transistor is available in both
screwdown, flange and solder-down, pill packages. Based on
appropriate external match adjustment, the CGH55015F2/P2 is
suitable for applications up to 6 GHz.
Features
• 4.5 to 6.0 GHz Operation
• 12 dB Small Signal Gain at 5.65 GHz
• 13 W typical PSAT
• 60% Efficiency at PSAT
• 28 V Operation
Large Signal Models Available for ADS and MWO
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms