Description
Wolfspeed’s CG2H80045D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT). GaN has superior
properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift
velocity, and higher thermal conductivity. GaN HEMTs offer
greater power density and wider bandwidths compared to Si
and GaAs transistors
Features
• 15 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 8 GHz
• 45 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 8 GHz Operation
• High Efficiency
Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms