DESCRIPTION
The μ PA508TE is a switching device, which can be driven
directly by a 2.5 V power source.
This device incorporates a MOS FET, which features a low
on-state resistance and excellent switching characteristics,
and a low forward voltage Schottky barrier diode, and is
suitable for applications such as DC/DC converter of
portable machine and so on.
FEATURES
• 2.5 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
RDS(on)1 = 40 mΩ TYP. (VGS = 4.5 V, ID = 1.0 A)
RDS(on)2 = 42 mΩ TYP. (VGS = 4.0 V, ID = 1.0 A)
RDS(on)3 = 59 mΩ TYP. (VGS = 2.5 V, ID = 1.0 A)
• Low forward voltage (Schottky barrier diode)
VF = 0.35 V TYP. (IF = 1.0 A)