10-450 MHz, 10 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 35 mA, Pout = 10 Watts
   Power Gain — 25 dB
   Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power

Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 225°C Capable Plastic Package
• RoHS Compliant