| nhà sản xuất | tên linh kiện | bảng dữ liệu | Giải thích chi tiết về linh kiện |
 VIGO Photonics S.A. |
PVI4TE6TO8-36-DTE
|
722Kb / 2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PCI-2TE
|
797Kb / 2P |
1.0 – 15.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detectors
08/11/2020 |
|
PCI-3TE
|
774Kb / 2P |
1.0 – 15.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detectors
08/11/2020 |
|
PCI-4TE
|
774Kb / 2P |
1.0 – 16.0 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detectors
25/05/2022 |
|
PV-2TE
|
794Kb / 2P |
2.0 – 12.0 μm HgCdTe two-stage thermoelectrically cooled photovoltaic detectors
17/11/2020 |
|
PVI-3TE
|
796Kb / 2P |
2 – 12 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detectors
04/03/2021 |
|
PVI-4TE
|
799Kb / 2P |
2 – 12 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detectors
24/02/2021 |
|
PVMI-2TE
|
769Kb / 2P |
2.0 – 13.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors
09/11/2020 |
|
PVMI-3TE
|
767Kb / 2P |
2.0 – 13.0 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors
09/11/2020 |
|
PVMI-4TE
|
770Kb / 2P |
2.0 – 13.0 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors
09/11/2020 |