FEATURES
• Double internal input matching
for easy matching and high gain
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallizatlon ensures
excellent reliability.

DESCRIPTION
Two NPN silicon planar epitaxial
transistors in push-pull
configuration, intended for linear
common emitter class-AB operation
in base station transmitters in the
800 to 900 MHz range. The device
has double internal input malching.
The transistor is encapsulated in a
4-lead 80T324 flange envelope with
a ceramic cap. The flange provides
the common emitter connection for
both transistors.