50 W L-BAND PUSH-PULL POWER GaAs MESFET

DESCRIPTION
The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for
PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.1 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 1.5 to 2.1 GHz. The device employs 0.9
mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power: 50 W typ.
• High Linear Gain: 10.5 dB typ.
• High Drain Efficiency: 52 % typ. @VDS = 10 V, IDset = 2 A, f = 1.96 GHz