30W L-BAND POWER GaAs FET
N-CHANNEL GaAs MES FETDESCRIPTION
The NES1417B-30 is power GaAs FET which provides
high output power and high gain in the 1.4-1.7GHz
band.
Internal input matching circuits are designed to
optimize performance. The device has a 0.8 mm gate
length for increased linear gain. To reduce thermal
resistance, the device uses PHS (Plated Heat Sink)
technology.
The device incorporates WSi (tungsten silicide) gate
for high reliability and SiO2 glassivation for
surface stability.

FEATURES
· High output power
· High gain
· High power added efficiency
· Internally matched input
· High reliability