N-CHANNEL SILICON POWER MOS FET
FOR UHF-BAND POWER AMPLIFIER

DESCRIPTION
The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to
1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are
manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation
and triple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
• High 1 dB compression output power : PO (1 dB) = 40 W TYP. (VDS = 28 V, IDset = 250 mA, f = 960 MHz)
• High linear gain : GL = 20.0 dB TYP. (VDS = 28 V, IDset = 250 mA, f = 960 MHz)
• High drain efficiency : hd = 63% TYP. (VDS = 28 V, IDset = 250 mA, f = 960 MHz)
• Low intermodulation distortion : IM3 = -42 dBc TYP. (VDS = 28 V, IDset = 250 mA, f = 960, 961 MHz,
Pout = 36 dBm (2 tones) )
• Excellent thermal stability
• Low cost hollow plastic packages
• Integrated ESD protection
• Excellent stability against HCI
APPLICATIONS
• Digital cellular base station PA : GSM/D-AMPS/PDC/N-CDMA etc.
• UHF-band TV-transmitter PA